isc Silicon
NPN Power
Transistor
2SC2167
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·DC Current Gain-
: hFE= 60(Min)@ (VCE= 10V, IC= 0.
7A) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for TV vertical output ,audio output driver and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
2
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
1
A
30
W
150
℃
Tstg
St...