isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Power Dissipation-
: PC= 80W(Max.
)@TC=25℃ ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min.
) ·Complement to Type 2SA981 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
180
V
VCEO Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
3
A
80
W
150
℃
Tstg
Storage Temperature
-65~150 ℃
2SC...