isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Collector Power Dissipation
PC=10W(Tc=25℃), PC=1.
0W(Ta=25℃) ·High DC Current Gain
: hFE=140~450@VCE=2V,IC=0.
5A hFE=70(Min)@VCE=2V,IC=4A
·Low Collector Saturation Voltage VCE(sat)=1.
0V(Max)@IC=4A,IB=0.
1A
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
·Designed for strobo flash and medimum power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
50
VCEO
Collector-Emitter Voltage
20
VCES
Collector-Emitter Voltage
40
VEBO
Emitter-Base Voltage
8
IC
Collector Current-Continuous
5
ICM
Collector Current-Peak
8
IE
Emitte...