isc Silicon
NPN Power
Transistor
2SC3159
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 1.
0V(Max.
)@IC= 6A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching
regulator, DC-DC converter and high
frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
5.
0
A
...