isc Silicon
NPN Power
Transistor
2SC3169
DESCRIPTION
·
·Collector-Emiiter Sustaining Voltage-
: VCEO(SUS)= 400V(Min.
)
·Low Collector Saturation Voltage
: VCE(sat)= 1.
0V(Max.
)@ IC= 1A
·High Speed Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation
@TC=25℃
Tj
Junction...