isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High speed and high voltage switching applications.
·Switching
regulator applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
900
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Pulse
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction...