2SC3320

2SC3320 : UNISONIC TECHNOLOGIES CO.,LTD 2SC3320 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED SWITCHING  FEATURES * High voltage, high speed switching * High reliability  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC3320L-x-T3P-T 2SC3320L-x-T3P-T TO-3P 2SC3320L-x-T3N-T 2SC3320L-x-T3N-T TO-3PN Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 123 BCE BCE Packing Tube Tube  MARKING INFORMATION PACKAGE TO-3P TO-3PN MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R214-008.E 2SC3320 NPN EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TC = 25°C) PARAMETER SYMBOL RATINGS UNIT.

2SC3320 : ·With TO-3PN package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 15 5 80 150 -65~150 UNIT V V V A A W THERMAL CHARACTERIST.

2SC3320B : SEMICONDUCTOR 2SC3320B Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 15A/400V/150W RoHS RoHS Nell High Power Products 0 32 J C3 230 S 2 1 2.0 19.9±0.3 4.0 TO-3P(B) 20.0 min 4.0 max 2 3 +0.2 1.05 -0.1 5.45±0.1 C E +0.2 0.65 -0.1 FEATURES High-speed switching High collector to base voltage, V CBO Satisfactory linearity of foward current transfer ratio h FE TO-3P package which can be installed to the heat sink with one screw 5.45±0.1 B 1.8 15.6±0.4 9.6 5 . 0 ±0 . 2 4.8±0.2 2.0±0.1 Φ 3.2 ± 0,1 1.4 C 1 2 3 B APPLICATIONS Switching regulator and general purpose Ultrasonic generators High frequency inverters General purpose power amplifiers .

2SC3321 : 2SC3321 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3 Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers JEDEC EIAJ TO-3 TC-3, TB-3 Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol VCBO VCEO VCEO(SUS) VEBO IC IB PC Tj Tstg Rating 500 400 400 7 15 5 100 +150 -65 to +150 Unit V V V V A A W °C °C Electrical characteristics (Tc =25°C unless otherwise specified) Item Symbol VCBO VCEO VCEO(SUS) VEBO ICBO IEBO hFE VCE(Sat) VBE(Sat) ton tstg tf Test Con.

2SC3322 : ·With TO-3P(I) package ·High voltage ·High speed APPLICATIONS ·High power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 900 800 7 5 10 2.5 80 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power .

2SC3322 : 2SC3322 Silicon NPN Tirple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC(peak) IB PC* Tj Tstg 1 Ratings 900 800 7 5 10 2.5 80 150 –55 to +150 Unit V V V A A A W °C °C Free Datasheet http://www.datasheet4u.com/ 2SC3322 Electrical Characteristics (Ta = 25°C) Item Collector to emitter sustain voltage Sym.

2SC3324 : TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3324 2SC3324 Audio Frequency Low Noise Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) • Complementary to 2SA1312 • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 120 120 5 100 20 150 125 −55~125 V V V mA mA mW °C °C.

2SC3324 : SMD Type Silicon NPN Epitaxial 2SC3324 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 High hFE.hFE=200 to 700 Low noise. Small package. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 High voltageVCEO=120V 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 120 120 5 100 20 150 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off curren.

2SC3325 : TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3325 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications 2SC3325 Unit: mm • Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) • High voltage: VCEO = 50 V (min) • Complementary to 2SA1313 • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 50 V 50 V 5 V 500 mA 50 mA 200 mW 150 °C −55 to 150 °.

2SC3325 : SMD Type Silicon NPN Epitaxial 2SC3325 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA). High voltage: VCEO = 50 V (min). Small package. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 500 50 200 150 -55 to +150 Unit V V V mA mA mW Electrical Char.

2SC3326 : TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications 2SC3326 Unit: mm  AEC-Q101 Qualified (Note1).  High emitter-base voltage: VEBO = 25 V  High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA)  Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)  High DC current gain: hFE = 200 to 1200  Small package Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO 50 V .

2SC3326 : SMD Type Silicon NPN Epitaxial 2SC3326 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 High emitter-base voltage: VEBO = 25 V (min). High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA). Low on resistance: RON = 1 (typ.) (IB = 5 mA). +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 Small package. +0.1 0.38-0.1 +0.1 0.97-0.1 High DC current gain: hFE = 200 1200. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symb.

2SC3326 : SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package.  / Features VEBO， hFE。 High emitter-base voltage, High DC current gain. / Applications 。 For muting and switching applications. / Equivalent Circuit / Pinning 3 2 1 PIN1：Emitter PIN 2：Base PIN 3：Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range A 200～700 B 350～1200 Marking HPA HPB http://www.fsbrec.com 1/6 2SC3326 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO V.

2SC3327 : .

2SC3328 : 2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3328 Power Amplifier Applications Power Switching Applications Unit: mm • • • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 1.0 µs (typ.) Complementary to 2SA1315 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 80 5 2 1 900 150 −55 to 150 Unit V V V A A mW °C °C JEDEC JEITA TOSHIBA TO-92MOD ― 2-5J1A Weight: 0.36 g (typ.) 1 2004-07-07 Free Datasheet http:/.

2SC3328 : TO-92LM NPN 。Silicon NPN transistor in a TO-92LM Plastic Package. / Features ,， 2SA1315 。 Low VCE(sat) voltage: VCE(sat)=0.5V(MAX.)(IC=1A),High complementary pair with 2SA1315. speed switching time: tstg=1.0μs(Typ.) / Applications 。 Power Amplifier switching applications. / Equivalent Circuit / Pinning 123 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range O 70～140 Y 120～240 http://www.fsbrec.com 1/6 2SC3328 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Base Current Collector Power Dissi.