isc Silicon
NPN Power
Transistor
2SD1311
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min) ·Low Collector Saturation Voltage-
: VCE(sat)= 1.
5V(Max.
)@IC= 3A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7.
0
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
6
A
IB
Base Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
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