isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 40V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
5V(Max) @IC= 2A ·High DC Current Gain
: hFE= 2000(Min) @ IC= 1A, VCE= 2V ·Complement to Type 2SB1023 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching applications ·Hammer driver,pulse motor driver applications ·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
IB
Base Curr...