isc Silicon
NPN Power
Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 2.
0V(Max)@IC= 5A ·Wide Area of Safe Operation ·Complement to Type 2SB1056 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
140
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
12
A
3 W
80
150
℃
Tstg
Stora...