isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
6
A
IC(surge) Collector Current-Surge
PC
Collector Power Dissipation @ TC= 25℃
TJ
Junction Temperature
16
A
50
W
150
℃
Tstg
Storage Temperature Range
-45~150
℃
2SD1497
isc website:www.
iscsemi.
com
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