isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
6
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
20
A
65
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SD1...