isc Silicon
NPN Power
Transistors
DESCRIPTION ·Low Collector Saturation Voltage ·High Power Dissipation-
: PC= 10W(Max)@TC=25℃ ·Complement to Type 2SB1261-K ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio amplifier and switching,
especially in hybrid integrated circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
3
A
10
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
2SD1899-K
is...