isc Silicon
NPN Power
Transistor
2SD1941
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for CTV/character display horizontal deflection
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
650
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
6
A
IC(peak) Collector Current- Peak
7
A
IC(surge) Collector Current-Surge
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
16
A
50
W
150
℃
Tstg
Stor...