isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V(Min) ·High DC Current Gain-
: hFE= 5000( Min.
) @(IC= 5A, VCE= 4V) ·Low Collector Saturation Voltage-
: VCE(sat)= 2.
5V(Max)@ (IC= 5A, IB= 5mA) ·Complement to Type 2SB1624 ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for audio, series
regulator and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
110
V
VCEO
Collector-Emitter Voltage
110
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
IB
Base Current-Continuous
...