isc Silicon
NPN Power
Transistor
BD241/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.
0A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BD241; 60V(Min)- BD241A 80V(Min)- BD241B; 100V(Min)- BD241C
·Complement to Type BD242/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD241
55
BD241A
70
VCBO
Collector-Base Voltage
V
BD241B
90
BD241C
115
BD241
45
VCEO
Collector-Emitter Voltage
BD241A
60
V
BD241B
80
BD241C
100
VEBO
Emitter-Base Voltage
5
V
I...