isc Silicon
NPN Power
Transistor
BD245/A/B/C
DESCRIPTION ·Collector Current -IC= 10A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C
·Complement to Type BD246/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD245
55
VCER
Collector-Emitter Voltage (RBE= 100Ω)
BD245A BD245B
70 90
V
BD245C
115
BD245
45
VCEO
Collector-Emitter Voltage
BD245A
60
V
BD245B
80
BD245C
100
VEBO
Emitter-Base Voltage
5
V
IC
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