isc Silicon
PNP Power
Transistor
BD246/A/B/C
DESCRIPTION ·Collector Current -IC= -10A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A -80V(Min)- BD246B; -100V(Min)- BD246C
·Complement to Type BD245/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BD246
-55
VCER
Collector-Emitter Voltage (RBE= 100Ω)
BD246A BD246B
-70 -90
BD246C -115
BD246
-45
VCEO
Collector-Emitter Voltage
BD246A
-60
BD246B
-80
BD246C -100
VEBO
Emitter-Base Voltage
-5
IC
Co...