isc Silicon
PNP Power
Transistor
DESCRIPTION ·Collector Current -IC= -25A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -45V(Min)- BD250; -60V(Min)- BD250A -80V(Min)- BD250B; -100V(Min)- BD250C
·Complement to Type BD249/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BD250
-55
VCER
Collector-Emitter Voltage (RBE= 100Ω)
BD250A BD250B
-70 -90
BD250C -115
BD250
-45
VCEO
Collector-Emitter Voltage
BD250A
-60
BD250B
-80
BD250C -100
VEBO
Emitter-Base Voltage
-5
IC
Collector Curre...