isc Silicon
NPN Power
Transistor
BD807
DESCRIPTION ·DC Current Gain -
: hFE = 30(Min.
)@ IC= 2A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min) ·Complement to Type BD808 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high power audio amplifiers utilizing
complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
70
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
IB
Base Current
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
6
A
9...