isc Silicon
NPN Power
Transistors
BDT29/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 0.
4A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 40V(Min)- BDT29; 60V(Min)- BDT29A 80V(Min)- BDT29B; 100V(Min)- BDT29C
·Complement to Type BDT30/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in output stages of audio and television
amplifier circuits where high peak powers can occur.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDT29
80
BDT29A
100
VCBO Collector-Base Voltage
BDT29B
120
BDT29C
140
BDT29
40
BDT29A
60
VCEO Collector-Emitter Voltage
BDT29B
80
BDT29C
100
VEBO
Emitter...