isc Silicon
PNP Power
Transistors
BDT32/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1.
0A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -40V(Min)- BDT32; -60V(Min)- BDT32A -80V(Min)- BDT32B; -100V(Min)- BDT32C
·Complement to Type BDT31/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio output stages and general amplifier
and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBO L
PARAMETER
BDT32
VALUE -80
UNIT
BDT 32A
-100
VCBO Collector-Base Voltage
V
BDT 32B
-120
BDT 32C -140
BDT32
-40
BDT 32A
-60
VCEO Collector-Emitter Voltage
V
BDT 32B
-80
BDT 32C -100
VEBO ...