isc Silicon
NPN Power
Transistors
BDT41/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.
3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 40V(Min)- BDT41; 60V(Min)- BDT41A 80V(Min)- BDT41B; 100V(Min)- BDT41C
·Complement to Type BDT42/42A/42B/42C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose amplifer and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDT41
80
BDT41A
100
VCBO
Collector-Base Voltage
BDT41B
120
BDT41C
140
BDT41
40
VCEO
Collector-Emitter Voltage
BDT41A
60
BDT41B
80
BDT41C
100
VEBO
Emitter-Base Voltage
5
IC
Collector...