isc Silicon
NPN Darlington Power
Transistors
BDT61/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= 1.
5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)- BDT61B; 120V(Min)- BDT61C
·Complement to Type BDT60/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in audio amplifier output stages , general
purpose amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
BDT61
60
VCBO
Collector-Base Voltage
BDT61A
80
V
BDT61B
100
BDT61C
120
BDT61
60
VCEO
Collector-Emitter Voltage
BDT61A
80
V
BDT61...