isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDT64F/AF/BF/CF ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT65F
60
VCER
Collector-Emitter Voltage
BDT65AF
80
BDT65BF 100
V
BDT65CF 120
BDT65F
60
VCEO
Collector-Emitter Voltage
BDT65AF
80
BDT65BF 100
V
BDT65CF 120
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
20
A
IB
Base...