isc Silicon
PNP Darlington Power
Transistor
DESCRIPTION ·Collector Current -IC= -15A ·High DC Current Gain-hFE= 750(Min)@ IC= -6A ·Complement to Type BDW83D ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose amplifier and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCER Collector-Emitter Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ Ta=25℃ Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-0.
5
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