isc Silicon
NPN Power
Transistor
BU406H
DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Low Saturation Voltage-
: VCE(sat)= 1.
0V(Max.
)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection output stages
of TV’s and CRT’s
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICP
Collector Current-Peak Repetitive
10
A
ICP
Collector Current- Peak (10ms)
15
A
IB
Base Current
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Te...