4-Pin DIP Photo
transistor Optocouplers
FOD814, FOD817
Introduction or Description The FOD814 consists of two gallium arsenide infrared emitting
diodes, connected in inverse parallel, driving a silicon photo
transistor output in a 4−pin dual in−line package.
The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon photo
transistor in a 4−pin dual in−line package.
Features
• AC Input Response (FOD814) • Current Transfer Ratio in Selected Groups
♦ FOD814: 20–300% ♦ FOD814A: 50–150% ♦ FOD817: 50–600% ♦ FOD817A: 80–160% ♦ FOD817B: 130–260% ♦ FOD817C: 200–400% ♦ FOD817D: 300–600%
• Minimum BVCEO of 70 V Guaranteed • Safety and
Regulatory Approvals
♦ UL1577, 5,000 VA...