isc Silicon
NPN Power
Transistor
DESCRIPTION · Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 125V(Min) ·High Current Capability ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching and linear applications in military
equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
160
V
VCEO(SUS) Collector-Emitter Voltage
125
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
20
A
ICM
Collector Current-Peak
28
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=100℃
TJ
Junction Temperature
4
A
120
W
200...