|
Part Number
|
2SB1098 |
|
Manufacturer
|
INCHANGE |
|
Description
|
PNP Transistor |
|
Published
|
Sep 27, 2020 |
|
Datasheet
|
2SB1098
|
Features
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·High DC Current Gain-
: hFE=2000(Min)@ (VCE= -2V, IC= -3A) ·Minimum Lot-to-Lot variations for robust device
performance and reliabl...
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