2SB1145

2SB1140 : w w w . D a t a S h e e t 4 U . n e t Ordering number:ENN2069A PNP Epitaxial Planar Silicon Transistor 2SB1140 20V/5A Switching Applications Applications · Strobes, power supplies, relay drivers, lamp drivers. Package Dimensions unit:mm 2042B [2SB1140] 8.0 1.0 4.0 1.0 Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity. · Short switching time. 1.6 0.8 1.4 3.3 3.0 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector.

2SB1141 : Ordering number:2020A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1141/2SD1681 18V/1.2A Switching Applications Applications · Converters, relay drivers, low-voltage and high power AF Amplifier. Features · Low saturation voltage and excellent linearity of hFE. · Wide ASO. Package Dimensions unit:mm 2042A [2SB1141/2SD1681] ( ) : 2SB1141 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Condition.

2SB1142 : Ordering number:2060A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1142/2SD1682 50V/2.5A High-Speed Switching Applications Applications · Power supplies, relay drivers, lamp drivers. Package Dimensions unit:mm 2042A [2SB1142/2SD1682] Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. ( ) : 2SB1142 B : Base C : Collector E : Emitter SANYO : TO-126ML Conditions Ratings (–)60 (–)50 (–)6 (–)2.5 (–)5.0 1.5 Unit V V V A A W W Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation.

2SB1143 : Ordering number:ENN2063A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1143/2SD1683 50V/4A Switching Applications www.datasheet4u.com Applications · Voltage regulators, relay drivers, lamp drivers, electrical equipment. Package Dimensions unit:mm 2042B [2SB1143/2SD1683] 8.0 1.0 Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. 1.6 0.8 1.4 4.0 1.0 3.3 3.0 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temp.

2SB1143 : Ordering number : EN2063C 2SB1143/2SD1683 Bipolar Transistor (–)50V, (–)4A, Low VCE(sat), (PNP)NPN Single TO-126ML Applications • http://onsemi.com Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • Adoption of FBET, MBIT processes Large current capacity and wide ASO • Low saturation voltage Specifications ( ): 2SB1143 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C1 Conditions Ratings (--)60 (--)50 (-)6 (-)4 (-)6 1.5 0 150 -.

2SB1144 : Ordering number:2041A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1144/2SD1684 100V/1.5A Switching Applications Features · Adoption of FBET and MBIT processes. · High breakdown voltage. · Low saturation voltage. · Plastic-covered heat sink facilitating high-density mounting. Package Dimensions unit:mm 2042B [2SB1144/2SD1684] ( ) : 2SB1144 1 : Emitter 2 : Collector 3 : Base Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C Conditions.

2SB1144 : ··Low Collector Saturation Voltage : VCE(sat)= -0.3V(Max)@IC= -0.5A ·Wide Area of Safe Operation ·Complement to Type 2SD1684 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for 100V/1.5A Switching Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.5 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -2 A 10 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ .

2SB1145 : ·With TO-220F package ·High DC current gain. ·DARLINGTON ·Low collector saturation voltage APPLICATIONS ·For high current driver and power driver applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -6 -3 -5 20 W UNIT V V V A A SavantIC Semiconductor www.DataSheet4U.com Product Specificat.

2SB1148 : Power Transistors 2SB1148, 2SB1148A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1752 and 2SD1752A 7.0±0.3 3.0±0.2 3.5±0.2 Unit: mm s Features q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings –40 –50 –20 –40 –7 –20 –10 15 1.3 150 –55 to +150 Unit V 7.2±0.3 0.8±0.2 1.1±0.1 0.85±0.1 0.4±0.1 1.0±0.2 10.0 –0. +0.3 0.75±0.1 2.3±0.2 4.6±0.4 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1148 2SB1148A 2SB1148 Symbol VCBO VCEO VEBO ICP IC P.

2SB1148A : Power Transistors 2SB1148, 2SB1148A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1752 and 2SD1752A 7.0±0.3 3.0±0.2 3.5±0.2 Unit: mm s Features q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings –40 –50 –20 –40 –7 –20 –10 15 1.3 150 –55 to +150 Unit V 7.2±0.3 0.8±0.2 1.1±0.1 0.85±0.1 0.4±0.1 1.0±0.2 10.0 –0. +0.3 0.75±0.1 2.3±0.2 4.6±0.4 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1148 2SB1148A 2SB1148 Symbol VCBO VCEO VEBO ICP IC P.

2SB1149 : ·High DC Current Gain- : hFE= 2000(Min.)@IC= -1.5A ·Low Collector Saturation Voltage- : VCE(sat)= -1.2V(Max)@IC= -1.5A ·Good Linearity of hFE ·With TO-126 package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Operate from Ic without predriver applications. ·Hammer driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ Tc=25℃ Junction Temperature Storage Temperature Range -100 V -100 V.

2SB1149 : ·With TO-126 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Ta=25 PD Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 15 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -8 -3.0 -5.0 1.3 W UNIT V V V A A SavantIC Semiconductor www.DataSheet4U.com .