isc Silicon
PNP Power
Transistors
DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speeds ·Complement to Type D44H10 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general pourpose power amplification and
switching such as output or driver stages in applications such as switching
regulators,converters and power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter Voltage
-80
V
VEBO IC ICM PC Tj Tstg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature
Storage Temperature Range
-5
V
-10
A
-20
...