MJ11020

MJ11021 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11017/D Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. • High dc Current Gain @ 10 Adc — hFE = 400 Min (All Types) • Collector–Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) – MJ11018, 17 VCEO(sus) = 250 Vdc (Min) – MJ11022, 21 • Low Collector–Emitter Saturation VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A • Monolithic Construction • 100% SOA Tested @ VCE = 44 V, IC = 4.0 A, t = 250 ms. MAXIMUM RATINGS MJ11017 MJ11021* NPN MJ11018* MJ11022 *Motorola Preferred Device PNP ÎÎÎÎÎÎÎÎÎÎ.

MJ11021 : www.DataSheet4U.com MJ11021(PNP) MJ11022 (NPN) Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features http://onsemi.com • High dc Current Gain @ 10 Adc − hFE = 400 Min (All Types) • Collector−Emitter Sustaining Voltage • Low Collector−Emitter Saturation VCE(sat) VCEO(sus) = 250 Vdc (Min) − MJ11022, 21 = 1.0 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A 100% SOA Tested @ VCE = 44 V IC = 4.0 A t = 250 ms Pb−Free Packages are Available* 15 AMPERE COMPLEMENTARY DARLINGTON POWER TRANSISTORS 250 VOLTS, 175 WATTS • • TO−204 (TO−3) .

MJ11021 : A A A A .

MJ11022 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11017/D Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. • High dc Current Gain @ 10 Adc — hFE = 400 Min (All Types) • Collector–Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) – MJ11018, 17 VCEO(sus) = 250 Vdc (Min) – MJ11022, 21 • Low Collector–Emitter Saturation VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A • Monolithic Construction • 100% SOA Tested @ VCE = 44 V, IC = 4.0 A, t = 250 ms. MAXIMUM RATINGS MJ11017 MJ11021* NPN MJ11018* MJ11022 *Motorola Preferred Device PNP ÎÎÎÎÎÎÎÎÎÎ.

MJ11022 : www.DataSheet4U.com MJ11021(PNP) MJ11022 (NPN) Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features http://onsemi.com • High dc Current Gain @ 10 Adc − hFE = 400 Min (All Types) • Collector−Emitter Sustaining Voltage • Low Collector−Emitter Saturation VCE(sat) VCEO(sus) = 250 Vdc (Min) − MJ11022, 21 = 1.0 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A 100% SOA Tested @ VCE = 44 V IC = 4.0 A t = 250 ms Pb−Free Packages are Available* 15 AMPERE COMPLEMENTARY DARLINGTON POWER TRANSISTORS 250 VOLTS, 175 WATTS • • TO−204 (TO−3) .

MJ11022 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V (Min.) ·High DC Current Gain- : hFE= 400(Min.)@IC= 10A ·Low Collector Saturation Voltage- : VCE (sat)= 1.0V(Max.)@ IC= 5.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifiers, low frequency switching and motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 250 VCEO Collector-Emitter Voltage 250 VEBO Emitter-Base Voltage 5 IC Collector Current-Continunous 15 ICM Collector Current-Peak 30 IB Base Current-Continunous 0.5 PC Collector Power Dissipation @TC=25℃ 175 Tj .

MJ11028 : The MJ11028 i a silicon Darlington NPN transistor in a TO−3 type package designed for use as an output device in general purpose amplifier applications. Features: D High Gain Darlington Performance D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A D Monolithic Construction w/Built−In Base−Emitter Shunt Resistor Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter−Base Voltage, VEBO . . . . . . .

MJ11028 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11028/D High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) • Diode Protection to Rated IC • Monolithic Construction with Built–In Base–Emitter Shunt Resistor • Junction Temperature to + 200_C MAXIMUM RATINGS Rating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.

MJ11028 : MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) • Diode Protection to Rated IC • Monolithic Construction with Built−In Base−Emitter Shunt Resistor • Junction Temperature to + 200_C • Pb−Free Packages are Available* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage MJ11028/29 MJ11030 MJ11032/33 VCEO 60 Vdc 90 120.

MJ11028 : NPN PNP MJ11029 MJ11031 MJ11033 LAB MECHANICAL DATA Dimensions in mm (inches) 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) SEME MJ11028 MJ11030 MJ11032 COMPLEMENTARY DARLINGTON POWER TRANSISTOR FEATURES 30 .15 (1.187 ) 1 1 6 .89 (0.665) 2 • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A HFE = 400 Min 0@ IC = 50A • CURVES TO 100A (Pulsed) • DIODE PROTECTION TO RATED IC • MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE – EMITTER SHUNT RESISTOR 4.1 (0.161 +0.4 –0 +0.016 –0 ) 4.0 ± 0.1 (0.157 ± 0.004) 11.65 ± 0.35 (0.459 ± 0.014) 9.0 (0.354) • JUNCTION TEMPERATURE TO +200°C Tolerance ± 0.127 unless otherwise stated (0.005) APPLICATIONS Case – Collector TO–3 Pin 1 – Base Pin 2 – Emitter .

MJ11028 : MJ11028, MJ11030, MJ11032 – NPN MJ11029, MJ11031, MJ11033 – PNP High-reliability discrete products and engineering services since 1977 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Ratings Collector-emitter voltage Collector-base voltage Emitter-base voltage Continuous collector current Peak collector current Continuous base current Total device dissipation @ TC = 25°C Derate above 25°C @ TC = 100°C Operating and storage temperature range Maximum lead tempe.

MJ11028 : ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement to the PNP MJ11029 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MJ11028 APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continunous 50 A ICM Collector Current-Peak 100 A IB Base Current-Continunous PC Collector Power Dissipation @TC=25℃ Tj Jun.

MJ11029 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11028/D High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) • Diode Protection to Rated IC • Monolithic Construction with Built–In Base–Emitter Shunt Resistor • Junction Temperature to + 200_C MAXIMUM RATINGS Rating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.

MJ11029 : MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) • Diode Protection to Rated IC • Monolithic Construction with Built−In Base−Emitter Shunt Resistor • Junction Temperature to + 200_C • Pb−Free Packages are Available* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage MJ11028/29 MJ11030 MJ11032/33 VCEO 60 Vdc 90 120.

MJ11029 : NPN PNP MJ11029 MJ11031 MJ11033 LAB MECHANICAL DATA Dimensions in mm (inches) 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) SEME MJ11028 MJ11030 MJ11032 COMPLEMENTARY DARLINGTON POWER TRANSISTOR FEATURES 30 .15 (1.187 ) 1 1 6 .89 (0.665) 2 • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A HFE = 400 Min 0@ IC = 50A • CURVES TO 100A (Pulsed) • DIODE PROTECTION TO RATED IC • MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE – EMITTER SHUNT RESISTOR 4.1 (0.161 +0.4 –0 +0.016 –0 ) 4.0 ± 0.1 (0.157 ± 0.004) 11.65 ± 0.35 (0.459 ± 0.014) 9.0 (0.354) • JUNCTION TEMPERATURE TO +200°C Tolerance ± 0.127 unless otherwise stated (0.005) APPLICATIONS Case – Collector TO–3 Pin 1 – Base Pin 2 – Emitter .

MJ11029 : MJ11028, MJ11030, MJ11032 – NPN MJ11029, MJ11031, MJ11033 – PNP High-reliability discrete products and engineering services since 1977 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Ratings Collector-emitter voltage Collector-base voltage Emitter-base voltage Continuous collector current Peak collector current Continuous base current Total device dissipation @ TC = 25°C Derate above 25°C @ TC = 100°C Operating and storage temperature range Maximum lead tempe.