MJE16004

MJE16002 : ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 450V(Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed switching of inductive circuits where fall time and RBSOA are critical. they are particularly well-suited for line-operated switchmode applications such as: ·Switching Regulators ·High resolution deflection circuits ·Inverters ·Motor drive Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEV Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-peak IB Base Current IBM.

MJE16002 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE16002/D Designer's SWITCHMODE Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed switching of inductive circuits where fall time and RBSOA are critical. They are particularly well–suited for line–operated switchmode applications. The MJE16004 is a high–gain version of the MJE16002 and MJH16002 for applications where drive current is limited. Typical Applications: Switching Regulators High Resolution Deflection Circuits Inverters Motor Drives Fast Switching Speeds 50 ns Inductive Fall Time @ 75_C (Typ) 70 ns Crossover Time @ 75_C (Typ) • 100_C Performance Specified for: Reverse–Bi.

MJE16002 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE16002/D Designer's SWITCHMODE Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed switching of inductive circuits where fall time and RBSOA are critical. They are particularly well–suited for line–operated switchmode applications. The MJE16004 is a high–gain version of the MJE16002 and MJH16002 for applications where drive current is limited. Typical Applications: Switching Regulators High Resolution Deflection Circuits Inverters Motor Drives Fast Switching Speeds 50 ns Inductive Fall Time @ 75_C (Typ) 70 ns Crossover Time @ 75_C (Typ) • 100_C Performance Specified for: Reverse–Bi.

MJE16004 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE16002/D Designer's SWITCHMODE Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed switching of inductive circuits where fall time and RBSOA are critical. They are particularly well–suited for line–operated switchmode applications. The MJE16004 is a high–gain version of the MJE16002 and MJH16002 for applications where drive current is limited. Typical Applications: Switching Regulators High Resolution Deflection Circuits Inverters Motor Drives Fast Switching Speeds 50 ns Inductive Fall Time @ 75_C (Typ) 70 ns Crossover Time @ 75_C (Typ) • 100_C Performance Specified for: Reverse–Bi.

MJE16004 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE16002/D Designer's SWITCHMODE Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed switching of inductive circuits where fall time and RBSOA are critical. They are particularly well–suited for line–operated switchmode applications. The MJE16004 is a high–gain version of the MJE16002 and MJH16002 for applications where drive current is limited. Typical Applications: Switching Regulators High Resolution Deflection Circuits Inverters Motor Drives Fast Switching Speeds 50 ns Inductive Fall Time @ 75_C (Typ) 70 ns Crossover Time @ 75_C (Typ) • 100_C Performance Specified for: Reverse–Bi.

MJE16004 : ·With TO-220 package www.datasheet4u.com ·High voltage ,high speed APPLICATIONS ·Switching regulators ·High resolution deflection circuits ·Inverters ·Motor drives PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION MJE16004 ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 850 450 6 5 10 4 8 80 150 -65~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Ther.