| Part Number | 2SC1610 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance ... |
| Features |
Voltage IC=10A; IB= 1.0A
VBE(sat) Base-Emitter Saturation Voltage
IC=10A; IB= 1.0A
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
hFE
DC Current Gain
IC=5A; VCE= 5V
MIN TYP. MAX UNIT
1.0
V
2.0
V
100
V
6
V
30
160
...
|
| File Size | 173.16KB |
| Datasheet |
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2SC1610 : ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For high speed power switching applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 150 100 6 10 100 175 -55~175 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.17 UNIT /W SavantIC Semiconductor www..
2SC1615 : .
2SC1617 : ·Silicon NPN triple diffused type ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Black and white TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 300 V 100 V 5 V 7 A 50 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W isc websi.
2SC1617 : ; SILICON NPN TRIPLE DIFFUSED TYPE BLACK AND WHITE TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES • High Voltage : VCBO=300V • Wide Safe Oprating Area. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO Collector-Emitter Voltage v CEO Emitter-Base Voltage v EBO Collector Current ic Emitter Current XE Collector Power Dissipation Junction Temperature Storage Temperature Range pC T J T stg RATING 300 100 5 7 -7 50 150 -55M.50 UNIT V V V A A W °C °C 1. BASE 2. EMITTER COLLECTOR (CASE) TC - 3, TI 2 - 21A1A Mounting kit No. AC73 Weight : 12. Og ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current .
2SC1617 : ·With TO-3 package ·High voltage: VCBO(min):300V ·Wide safe oprating area APPLICATIONS ·For B/W white TV horizontal output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 300 100 5 7 -7 50 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transis.
2SC1618 : ·With TO-3 package ·High current capacity ·Wide safe oprating area APPLICATIONS ·For audio frequency output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 80 60 6 6 10 50 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHAR.
2SC1618 : ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 80 V 60 V 6 V 6 A 50 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi i.
2SC1619 : ·With TO-3 package ·High current capacity ·Wide safe oprating area APPLICATIONS ·For audio frequency output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 100 80 6 6 10 50 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHA.
2SC1619 : ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 100 V 80 V 6 V 6 A 50 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi .