| Part Number | 2SC2304 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·With TO-3 Package ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICA... |
| Features |
oltage IC= 8A; IB= 1.6A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 8A; IB= 1.6A VCB=500V;IB= 0 VEB= 7V; IC=0
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
hFE-2
DC Current Gain
IC=10A ; VCE= 4V
MIN MAX UNIT
1.0
V
1.5
V
1
mA
1
...
|
| File Size | 174.36KB |
| Datasheet |
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2SC2304 : ·With TO-3 package ·High speed ,high voltage ·Wide area of safe operation APPLICATIONS ·For switching regulator application PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION MAXIMUN RATINGS SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Tmb-25 Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 12 100 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified.
2SC2305 : ·With TO-3 Package ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO IC PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 8 V 7 A 80 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.56 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is .
2SC2305 : ¡¤ ¡¤ With TO-3PN package ¡¤ High breakdown voltage ¡¤ Fast switching speed ¡¤ Wide safe operating area APPLICATIONS ¡¤ For switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION DataSheet4U.com DataShee Absolute maximum ratings (Ta=25¡æ ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Collector power dissipation Junction temperature Storage temperature TC=25¡æ CONDITIONS Open emitter Open base Open collector VALUE 400 400 8 7 14 3 80 150 -55~150 .
2SC2305 : ·With TO-3PN package ·High breakdown voltage ·Fast switching speed ·Wide safe operating area APPLICATIONS ·For switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current (DC) Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 400 400 8 7 14 3 80 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor www..
2SC2307 : www.DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com DataSheet4U.com DataSheet4U.com DataSheet 4 U .com .
2SC2307 : ·With TO-3PN package ·High voltage ,high speed APPLICATIONS ·For power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector MAX 500 400 7 12 100 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise.
2SC2307 : ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2307 isc website：www.iscsemi.com 1 isc & iscsemi is registered tr.
2SC2308 : 2SC458, 2SC2308 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA1029 and 2SA1030 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458, 2SC2308 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SC458 30 30 5 100 –100 200 150 –55 to +150 2SC2308 55 50 5 100 –100 200 150 –55 to +150 Unit V V V mA mA mW °C °C 2 2SC458, 2SC2308 Electrical Characteristics (Ta = 25°C) 2SC458 Item Collector to base breakdown voltage Collector to emit.
2SC2308 : 2SC458, 2SC2308 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SA1029 and 2SA1030 Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) REJ03G0681-0200 (Previous ADE-208-1043) Rev.2.00 Aug.10.2005 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SC458 30 30 5 100 –100 200 150 –55 to +150 2SC2308 55 50 5 100 –100 200 150 –55 to +150 (Ta = 25°C) Unit V V V mA mA mW °C °C Rev.2.00 Aug 10, 2005 pa.
2SC2309 : 2SC2309 Silicon NPN Epitaxial Application Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2309 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 55 50 5 100 200 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 55 50 5 — — 1 Typ — — — — — — — — 230 1.8 Max — — — 0.5 0.5 1200 0.75 0.2 — 3.5 Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I.