2SD402

2SD400 : Ordering number : EN0199 2SB544 / 2SD400 Preliminary SANYO Semiconductors DATA SHEET 2SB544 / 2SD400 PNP / NPN Epitaxial Planar Silicon Transistors Low-Frequency Power Amplifier Electronic Governor Applications Specifications ( ) : 2SB544 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta=25°C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-.

2SD400 : 2SD400 TO-92MOD Transistor (NPN) 1. EMITTER 2. COLLECTOR 3. BASE 0.900 1.100 8.400 8.800 TO-92MOD 5.800 6.200 1 2 3 Features — 0.400 0.600 13.800 14.200 Low-Frequency power Amp, Electronic Governor Applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 25 25 5 1 0.9 150 -55-150 Units V V V A W ℃ ℃ 4.000 2.900 3.100 0.000 0.380 1.600 1.500 TYP 0.400 4.700 0.500 5.100 1.730 2.030 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ Param.

2SD400 : 2SD400 TO-92MOD Transistor (NPN) 1 1. EMITTER 2 3 2. COLLECTOR 3. BASE Features — Low-Frequency power Amp, Electronic Governor Applications TO-92MOD 5.800 6.200 0.400 0.600 0.900 1.100 8.400 8.800 13.800 14.200 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 25 25 5 1 0.9 150 -55-150 Units V V V A W ℃ ℃ 0.000 0.380 1.500 TYP 2.900 3.100 1.600 0.400 4.700 0.500 5.100 4.000 1.730 2.030 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃.

2SD400 : YUKUTO SEMICONDUCTOR 2SD400 FEATURES Power dissipation PCM: 900 mW (TA=25℃) TRANSISTOR (NPN) Silicon Transistor TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE Collector current ICM: 1 A Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output CapactIan.

2SD400 : TO-92LM NPN 。Silicon NPN transistor in a TO-92LM Plastic Package. / Features ，。 High Voltage ,low. Current. / Applications 。 Low frequency power amplifier, electronic governor applications. / Equivalent Circuit / Pinning 123 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range D 60～120 E 100～200 F 160～320 G 280～560 http://www.fsbrec.com 1/6 2SD400(BR3DG400L) Rev.C Feb.-2015 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature .

2SD401 : SILICON EPITAXAL PLANAR TRANSISTOR Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA SYMBOL TO-220 CONDITIONS VBE = 0V MIN MAX 200 150 2 20 1.5 2.0 UNIT V V A A W V V s VCESM VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time Tmb 25 IC = 1.5A; IB = 0.15A IF = 1.5A 1.5 LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emit.

2SD401 : ·With TO-220C package ·Complement to type 2SB546 ·Collector current IC=2A ·Collector-base voltage VCBO=200V APPLICATIONS ·For use in general purpose power amplifier,vertical output application PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 200 150 5 2 25 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACT.

2SD401A : A A A .

2SD401A : www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ .

2SD401A : ·With TO-220C package ·Complement to type 2SB546A ·Collector current IC=2A ·Collector-collector voltage:VCEO=150V(Min) APPLICATIONS ·For use in general purpose power amplifier, vertical output application PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 200 150 5 2 3 25 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL R9jc CHARACTERI.

2SD401A : O 2SB546A / 2SD401A The 2SB546A and 2SD401A are high voltage triple diffused silicon transistors, These devices are designed for use in line-operated color TV vertical defiection of complementary symmetry circuit, The 2SB546A and 2SD401A are complementary transistors, consisting of straight leads Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Total Dissipation at Max. Operating Junction Temperature Symbol VCBO VCEO VEBO IC IC(peak) Ptot Tj Tstg Value 200 150 5 2.0 3.0 30 150 -55~150 Unit V V V A A W o o C C TO-220 Storage Temperature www.DataSheet.co.kr ELECTRICAL CHARACTERISTICST SEMICONDUCTOR CO., LTD Para.

2SD402 : ·With TO-220C package ·Complement to type 2SB547 ·High breakdown voltage APPLICATIONS ·Designed for use in line-operated color TV vertical deflection of complementary symmetry circuit PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Collector dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 200 150 5 2.0 3.0 1.5 20 150 -50~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL R7jc CHARACTE.

2SD402A : www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ .

2SD407 : www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ .

2SD408 : www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ .