2SD1360

2SD1360 : SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES . High DC Current Gain : h FE=600(Min. ) (at VCE=2V, Ic=2A) . Monolithic Construction with Built-in Base-Emitter Shunt Resistor. INDUSTRIAL APPLICATIONS Unit in mm 1G3MAX. MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 5V Collector Current ic 6 A Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range IB ?c T i T stg 1 30 150 -55~150 A W °C °C 1. BASE 2. COLLECTOR (HEAT SINK) 3l EMITTER EQUIVALENT CIRCUIT .

2SD1361 : : 2SD1361 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES . High DC Current Gain : h FE=2000(Min. ) (V CE=2V, I C=2A) INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. 0&2±o.2 MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 300 V Collector-Emitter Voltage Emitter-Base Voltage VcEO 250 V VeBO 5V Collector Current ic 6 A Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range IB ?c T i Tstg 1 30 150 -55^150 A W °C °C 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER EQUIVALENT CIRCUIT .COLLECTOR TOSHIBA 2-1 OKI A vaI 1 Weight : 2..

2SD1361 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching applications ·Igniter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 30 W 150 ℃.

2SD1362 : : 2SD1362 m SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm POWER AMPLIFIER APPLICATIONS. FEATURES . High Collector Current : Ic=7A . Low Saturation Voltage : VcE(sat)=0. 5V(Max. ) . High Collector Power Dissipation : Pc=40W (at Tc=25°C) . Complementary to 2SB992 (at Ic=4A) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VcBO VcEO VeBO ic RATING 100 80 UNIT V 10.3MAX, 7.0 03.2±O.2 1/ r~ y & i. to c5 X s to a w -H o o IS iri ji T1 | . 1.2 a 1.4 + 0.25 0.76-0.15 2.54 ±02^ \ 1 ,_ 2.54 ±0.25 iOO +1 ,i !! c3 €Hi=!: Base Curr.

2SD1362 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector Power Dissipation- : PC= 40W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 4A ·Complement to Type 2SB992 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications. ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ J.

2SD1363 : : SILICON NPN TRIPLE DIFFUSED TYPE — HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES . High Collector Current : Ic=7A . Low Saturation Voltage : VCE ( sat) =0.4V(Max.) (at I C =4A) . High Collector Power Dissipation : Pc=40W (at Tc=25°C) . Complementary to 2SB993 INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. 7.0 03.2±O.2 r 1' ' i i K. CO d' W d -H o o H+1 r-° to irf l i MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage SYMBOL VcBO RATING 70 UNIT V 1.4 + 0.25 0.7 6 -Q15 2.54±Q25 W 1i 2.54±0.25 Collector-Emitter Voltage VcEO 50 V Emitter-Base Voltage VEBO 5V Collector Current ic 7 A Base Current Collector Power Dissipation Ju.

2SD1365 : ·High Collector-Base Voltage : V(BR)CBO= 800V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Motor control systems. ·Power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation PC @Ta=25℃ Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature 5 A 1.5 W 40 150.

2SD1366 : 2SD1366 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1366 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg 2 1 Ratings 25 20 5 1 1.5 1 150 –55 to +150 Unit V V V A A W °C °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%. 2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(B.

2SD1366A : 2SD1366A Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1366A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg 2 1 Ratings 30 25 5 1 1.5 1 150 –55 to +150 Unit V V V A A W °C °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%. 2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V.

2SD1367 : 2SD1367 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1367 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg 2 1 Ratings 20 16 6 2 3 1 150 –55 to +150 Unit V V V A A W °C °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%. 2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to.

2SD1368 : 2SD1368 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB1002 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1368 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg 2 1 Ratings 100 50 6 1 1.5 1 150 –55 to +150 Unit V V V A A W °C °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector .

2SD1368-HF : SMD Type NPN Transistors 2SD1368-HF Transistors ■ Features ● Low frequency power amplifier ● Complementary to 2SB1002-HF ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse (Note.1) Collector Power Dissipation Junction Temperature Storage Temperature Range Note.1:PW ≤ 10 ms, Duty cycle ≤ 20%. Symbol VCBO VCEO VEBO IC ICP PC TJ Tstg Rating 100 50 6 1 1.5 1 150 -55 to 150 ■ Electrical Characteristics Ta = 25℃ Param.