isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SD2349
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·Low Saturation Voltage ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
10
A
ICM
Collector Current-Peak
20
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
5
A
5...