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BD539


Part Number BD539
Manufacturer INCHANGE
Title NPN Transistor
Description ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Complement to Type BD540 APPLICATIONS ·...
Features METER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(on) Base-Emitte...

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