| Part Number | IPP084N06L3 |
| Manufacturer | Infineon |
| Title | Power-Transistor |
| Description | Type OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excelle... |
| Features |
• Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free ... |
| File Size | 421.58KB |
| Datasheet |
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IPP084N06L3 : isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP084N06L3，IIPP084N06L3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.4mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 200 PD Total Dissipation @TC=25℃ 79 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·TH.
IPP084N06L3G : Type OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G Product Summary VDS RDS(on),max (SMD) ID 60 V 8.1 mΩ 50 A Type IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G Package Marking PG-TO263-3 081N06L PG-TO220-3 084N06L PG-TO262-3 084N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Cont.