IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G
OptiMOS™3 Power-
Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
150 V 20 mW 50 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G
IPP200N15N3 G
Package
PG-TO263-3
PG-TO252-3
Marking
200N15N
200N15N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Con...