IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G
OptiMOS™2 Power-
Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO252) ID
100 V 25 mW 35 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21
Type
IPB26CN10N G
IPD25CN10N G
IPI26CN10N G
IPP26CN10N G
Package
PG-TO263-3
PG-TO252-3
PG-TO262-3
Marking
26CN10N
25CN10N
26CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
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