IPP26CN10N

IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 25 mW 35 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JED...