| Part Number | IPB600N25N3 |
| Manufacturer | Infineon |
| Title | Power Transistor |
| Description | IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) produ... |
| Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 250 V 60 mW 25 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Haloge... |
| File Size | 629.07KB |
| Datasheet |
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IPB600N25N3G : IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Ideal for high-frequency switching and synchronous rectification 250 V 60 mW 25 A Type IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G Package Marking PG-TO263-3 600N25N PG-TO220-3 600N25N PG-TO262-3 600N25N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions V.
IPB600N25N3G : Isc N-Channel MOSFET Transistor IPB600N25N3G ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 250 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 25 18 100 PD Total Dissipation @TC=25℃ 136 Tch Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c).