| Part Number | IRF200P223 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF200P223，IIRF200P223 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤11.5mΩ ·Enhan... |
| Features |
·Static drain-source on-resistance: RDS(on)≤11.5mΩ ·Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=270μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·OR-ring and redundant power switches ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)... |
| File Size | 237.79KB |
| Datasheet |
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IRF200P222 : IRF200P222 MOSFET StrongIRFET™ Applications UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits G Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Lead-Free; RoHS Compliant; Halogen-Free D S G Gate VDSS RDS(on) typ. max ID 200V 5.3m 6.6m 182A TO-247AC IRF200P222 D Drain S Source Base part number IRF200P222 Package Type TO-247AC Standard Pack Form Tube Quantity Orderable P.
IRF200P223 : IRF200P223 MOSFET StrongIRFET™ D Applications UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits G S Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness G Fully Characterized Capacitance and Avalanche SOA Gate Enhanced body diode dv/dt and di/dt Capability Pb-Free ; RoHS Compliant ; Halogen-Free VDSS RDS(on) typ. max ID 200V 9.5m 11.5m 100A TO-247AC IRF200P223 D Drain S Source Base part number IRF200P223 Package Type TO-247AC Standard Pack Form Tube Quantity Ordera.