isc P-Channel Mosfet
Transistor
INCHANGE Semiconductor
IRF9530
FEATURES ·-12A,-100V ·Single pulse avalanche energy rated ·Static Drain-Source On-Resistance: RDS(on) =0.
3Ω(Max) ·SOA is power dissipation limited ·Nanosecond switching speeds ·Linear transfer characteristics ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRITION ·The power MOSFET is designed for applications such as
switching
regulators,switching convertors,motor drivers,relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
...