isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IRFP7537,IIRFP7537
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤3.
3mΩ ·Enhancement mode:
Vth =2.
1 to 3.
7 V (VDS=VGS, ID=150μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Synchronous Rectification
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
172
IDM
Drain Current-Single Pulsed
700
PD
Total Dissipation @TC=25℃
230
Tj
Max.
Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTIC...