isc N-Channel Mosfet
Transistor
INCHANGE Semiconductor
IRFR024NPBF
·FEATURES ·Drain Current ID=17A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 55V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =75mΩ(Max)@VGS=10V ·High density cell design for ultra low Rdson ·Fully characterized avalanche voltage and current ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Power switching application ·Hard switched and high frequency circuits ·Uninterruptible power supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
55
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
17
A
IDM...