isc N-Channel Mosfet
Transistor
INCHANGE Semiconductor
STP60NF10
·FEATURES ·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching mode power supplies ·General purpose power amplifier
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
100
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
80
A
ID(puls)
Pulse Drain Current
300
A
Ptot
Total Dissipation@TC=25℃
300
W
Tstg
Storage Temperature Range
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT...